technology
Sebenzisa inothi (chofoza ukuze ufunde kabanzi)

1.Bheka ukumelana kwento yokushisa ye-silicon carbide ku-batch efanayo ngaphambi kokuvula ukupakisha, faka ukumelana okuseduze kakhulu esigabeni esifanayo, okuzokwenza ukushisa kwesithando kufane kakhulu, ukumelana esizokubhala endaweni ebandayo.

2.Ngoba i-silicon carbide iyinto eqinile futhi ecekeceke, ungazami ukuyilungisa uma uyifaka, yenze ikwazi ukushukumiseka ngangokunokwenzeka, kusho ukuyenza ihambise futhi ingaphuma kalula ngemuva kokuyifaka. Into yokushisa ye-silicon carbide ingafaka nge-dangle noma iflethi.

Isilawuli se-elementi ye-silicon carbide yokushisa sisebenzisa isilawuli se-thyristor, ngakho-ke amandla ayaguquguquka, amandla alinganisiwe wesilawuli kufanele abe namandla aphindwe kabili kunamandla alinganiselwe esithandweni somlilo, ngaleyo ndlela enweba impilo yesici se-silicon carbide, eyisebenzisa ngendlela engcono.

4.Khetha indlela efanelekile yokuhlanganisa izintambo incike usayizi nokumelana kwento yokushisa ye-silicon carbide.

5.Into entsha yokushisa ye-silicon carbide kufanele ikhuphule amandla kancane enqubeni yokushisa, yenze umehluko phakathi kokushisa kwe-silicon carbide element kanye nokushisa kwesithando somlilo kuncane, ngaleyo ndlela kwandise impilo ye-silicon carbide element element life.ngemva kokufaka into yokushisa ye-silicon carbide, ukudluliswa kwamandla ngendlela elandelayo: Okokuqala beka amandla ku-30% -40% wamandla wokuklama ukushisa imizuzu engu-20 - imizuzu engama-40, bese enyuka aya kuma-60% -70% wamandla wokuklama ukuze afukameke imizuzu engama-20 - imizuzu engama-30, ngemuva ukushisa kwento yokushisa ye-silicon carbide kanye nesithando somlilo kuyalinganiselwa, bese kukhuphula amandla kancane, kuqoshwe ugesi namandla njengamanje kuze kube yilapho izinga lokushisa lifinyelela kwithempelesha oyifunayo, lokhu kungamandla evamile wokusebenzisa namandla wamanje we-silicon carbide element element, Ngaphakathi kwalolu hlu lwamanje kungasethwa ekulawuleni ukushisa okuzenzakalelayo, lapho ukumelana kwaba kukhuphuka okukhulu kwamandla afanelekile, ukwenza into yokushisa ye-silicon carbide ukuze i-maintai n amandla azinzile

6. Ngemuva kokuthi isithando somlilo sesilungile, lapho i-silicon carbide element element isifudumeza setha itafula njengokulandelayo: Lapho amandla wokudlulisa esethelwe ukuqala ukusebenzisa amandla angama-40% wamandla ajwayelekile, ukushisa imizuzu engama-20, bese unyusa izinga lokushisa kufinyelela kwithempelesha oyifunayo imizuzu eyi-10 kuya kwemizuzu engama-30, bese usetha isikhathi sokubamba.

7.Ungabheki nje i-voltage noma i-current ngenkathi usebenzisa i-silicon carbide heat element, ngoba lapho usebenzisa ukumelana kuzokhula kancane (i-voltage izoba nkulu futhi i-current izoba ncane), lapho amandla wokufaka ehlala njalo, khona-ke izinga lokushisa lihlala njalo.

Uma into yokushisa ye-silicon carbide yonakele ngemuva kokusebenzisa izinyanga, ungashintsheli entsha eyodwa, shintsha into esetshenzisiwe yokushisa ye-silicon carbide, lokho kungenxa yokuthi ukumelana kuzoba kukhulu lapho kusetshenziswa, ukumelana okusha kuzoba incane kakhulu, uma usebenzisa entsha izinga lokushisa lizohluka ngento esetshenzisiwe yokushisa ye-silicon carbide, ukuze ukwazi ukushintsha esetshenzisiwe, lokho kuzokwenza ukumelana nezinto zokufudumeza kusondele. uma ungenakho ukufudumeza okusetshenzisiwe izakhi, sicela ushintshe zonke izinto zokufudumeza zibe ezintsha, bese leyo osetshenzisile ungayishintsha lapho uyidinga.

Ukumelana kuzokuba kukhulu lapho usebenzisa into yokushisa, uma izinga lokushisa lingeneliseki lapho i-voltage ifinyelela phezulu kakhulu, sicela ushintshe ukuxhumana, njengokuxhumana ochungechungeni kungashintsha kuye ngokufana, ukuguqulwa kwenkanyezi kushintshele ku-delta connection, wena kufanele iguqule ukuxhumana kuncike kwisilawuli sakho.

I-oxide yensimbi ne-slag nezinye izinto esithandweni somlilo kufanele zisuswe ngesikhathi, ungazigcini esithandweni somlilo, uma kungenzeka zixhume isici sokushisa ukuze sonakaliswe.

Ukusetshenziswa okuqhubekayo kuzoba nempilo ende kunokusebenzisa okuphakathi.

12.Okufuna ukufudunyezwa akumele kube nomswakama omningi kakhulu, ukuze uvikele ukushisa kwe-element element, zama ukugwema ukuthintana ngqo nezinto ezinama-alkaline.

Ukushisa kwe-13 ye-silicon carbide element element surface akufanele kudlule ku-1550 ℃.

Ukumboza (chofoza ukuze ufunde kabanzi)

ISICTECH Silicon carbide Ukushisa element enamathela uhlobo zokwenziwa ifilimu, okuyinto enamathela ebusweni zone esishisayo emva ukukhiqizwa lesilicon khabhayithi Ukushisa element, kungaba ukunweba impilo Silicon khabhayithi Ukushisa element endaweni ekhethekile usebenzisa imvelo, Ungahlukaniswa negesi ukusheshisa ukuguga kwento yokushisa ye-silicon carbide, ukuvikela isici sokushisa se-silicon carbide, ukuthola imininingwane ethe xaxa yokumboza sicela ubone isingeniso esilandelayo:

1. T enamathela: lokhu enamathela usebenzisa ephansi namachibi izinga ukusetshenziswa evamile, wenze Silicon khabhayithi Ukushisa element ukwandisa impilo ukusebenza ka 30-60%.

2. D enamathela: lokhu enamathela usebenzisa endabeni nitrogen

3. S enamathela: lokhu enamathela usebenzisa ngezigaba ezintathu isigaba (W uhlobo lesilicon khabhayithi Ukushisa element) ingilazi iflothi

4. Q enamathela: le enamathela usebenzisa esimweni umusi noma hydrogen

 

Umkhathi Umphumela Ukuphikisa Ijazi elinconyiwe
Umusi Isikhathi se-Heater kwesinye isikhathi sincishiselwa ngaphansi kwengxenye yesihlanu yempilo elindelekile ngaphansi kwezimo ezivulekile zomoya. Kubalulekile ukukhuphula izinga lokushisa ngemuva kokuhlanza umswakama ngokwanele ezingeni lokushisa eliphansi lapho uqala isithando somlilo esisha noma uqala ukusebenzisa esisodwa ngemuva kokumiswa isikhathi eside. Q ijazi
Igesi le-Hydrogen ukumelana kukhuphuka ngokushesha futhi amandla ayo emishini ayawohloka ngokushesha uma izinga lokushisa lidlula i-1350 ° C emoyeni wegesi we-hydrogen. Impilo yesevisi, nokho, incike kakhulu ebusheni bomswakama wegesi. Kunconywa ukuthi isetshenziswe ekushiseni okungaphansi kuka-1300 ° C ekamelweni lesithando somlilo. Kunconywa ukuthi umthwalo ongaphezulu uzokwehliswa ngangokunokwenzeka. (5W / cm2)
Irhasi ye-nitrogen I-nitrogen gas iphendula nge-silicon carbide, yakha i-silicon nitride lapho izinga lokushisa lidlula i-1400 ° C, futhi lokhu kunciphisa impilo yensizakalo. Mayelana nomswakama, kuyefana nasendabeni ye-hydrogen. Kunconywa ukuthi isetshenziswe ekushiseni okungaphansi kuka-1300 ° C ekamelweni lesithando somlilo. Kunconywa ukuthi umthwalo ongaphezulu wehliswe ngangokunokwenzeka. (5W / cm2)。 D ijazi
Igesi eliguqulwe i-Amoniya (H275%) 、 (N225%) Lokhu kuyefana nasezimweni zegesi ye-hydrogen negesi ye-nitrogen. Kunconywa ukuthi isetshenziswe ekushiseni okungaphansi kuka-1300 ° C ekamelweni lesithando somlilo. Kunconywa ukuthi umthwalo ongaphezulu uzokwehliswa ngangokunokwenzeka. D ijazi
Ukubola kwegesi yokuphendula (N2, CO, CO2, H2, CH2etc.) I-hydrocarbon ebolile inamathela ebusweni bezinto zokushisa futhi ingadala ukujikeleza okuncane emkhathini kubandakanya i-hydrocarbon. Kuyadingeka ukuthi kushiswe ikhabhoni ngokwethula umoya ngezikhathi ezithile esithandweni somlilo. Isithando somlilo kagesi kufanele sakhiwe sinesikhala esibanzi phakathi kwezakhi zokushisa ze-EREMA ukuvimbela ukuhamba okufishane. D ijazi
Igesi lesibabule (S 2 SO2) Ubuso bezinto zokushisa buzokonakala futhi ukumelana kukhuphuke ngokushesha uma izinga lokushisa le-EREMA lidlula i-1300 ° C. Sebenzisa izakhi zokushisa ngaphansi kuka-1300 ° C. D ijazi
Abanye Izinto ezahlukahlukene, ezikhishwa ezintweni ezicutshunguliwe ngesikhathi sokubala, kufaka phakathi ama-halide anjengomthofu, i-antimony, i-alkali nomhlaba we-alkaline, kanye nama-oxide, izinhlanganisela zamakhemikhali zazo ngezikhathi ezithile zinganamathela ezintweni ezifudumeza futhi zikonakalise. Kubalulekile ukuzikhipha kusengaphambili ezintweni ezicutshunguliwe noma uziqede ngokufaka itheku lokukhipha. S ijazi
S ijazi
Izakhiwo zikagesi, izakhiwo zamakhemikhali (chofoza kukho ukuze ufunde kabanzi)

Izakhi zokushisa ze-SICTECH Silicon carbide ngokuvamile zingaphansi kokuxhuma kancane kancane, ukwakheka kweSilica nokwanda kokumelana nogesi, okubizwa ngokuthi ukuwohloka ngenkathi kusetshenziswa.Lokhu kusabela kwe-oxidation kuboniswa kwifomula elandelayo.

SiC + 2O2 → SiO2 + CO2

I-Silicon carbide (i-SiC) iphendula nge-oxygen (O2) emkhathini kanye nobuso bezinto zokushisa kancane kancane ama-oxide, akha iSilica (SiO2), eyi-insulator, ngenkathi inani layo landa. Lokhu kuphakamisa ukumelana nogesi. Ukuxhuma kwenzeka lapho izinga lokushisa lifinyelela ku-800 ° C futhi lishesha njengoba izinga lokushisa lenyuka. I-oxidation esheshayo izokwenzeka esigabeni sokuqala sokusetshenziswa, kepha izinga le-oxidation lizoncipha kancane kancane. umkhawulo wempilo yesevisi uphakanyiswa ukuthi ube lapho ukumelana kwawo kukhuphuka kuye cishe izikhathi ezi-3 ukumelana kokuqala. (Impilo ye-LD ne-LS ihlala kuze kube yilapho ukumelana kufinyelela izikhathi ezi-2 kunenani langempela). Isizathu ukuthi, kufinyelela ekukhuleni okucishe kube kathathu, ukwahluka kokumelana nento ngayinye kuba kukhulu futhi ukusatshalaliswa kokushisa kwento eyodwa kuya ngokuya kuba kubi, kubangele ukusatshalaliswa kokushisa okungafanele ekamelweni lesithando. Futhi, izinto zokushisa ze-silicon carbide, lapho zifika ekupheleni kwazo Impilo, ayibangeli ukwanda kokumelana kuphela kepha nezinguquko ekubonakaleni kwe-porosity nokwephuka ngokuwohloka kwamandla, ngakho-ke kufanele kuqashelwe.