• banner
  • I-SICTECH MHD silicon carbide heat element isebenzisa ubuchwepheshe bokushisa obusha eChina nakwamanye amazwe. Ukushisa okuphezulu kungafinyelela ku-1625 degrees Celsius. Inobuningi obukhulu kanye ne-porosity ephansi. Ingamelana ngokuphumelelayo nokuguguleka kwamagesi ayingozi, umhwamuko wamanzi nama-oxide ensimbi. Isivinini sokuguga, isikhathi sokusebenzisa isikhathi eside, ukunciphisa imvamisa yokufaka esikhundleni, ukwehlisa izindleko zokukhiqiza zabasebenzisi, ezifanele izindawo ezifunwayo ezifana nengilazi, i-elekthronikhi nezinto zensimbi eziyigugu.
    IHuanneng SICTECH i-silicon carbide yokushisa element ingahlinzeka ngezinto ezahlukahlukene zokushisa zomzimba nezakhiwo, izakhi zokushisa eziyizigaxa eziyize, izinto zokushisa eziqinile, izinto ezifudumeza ukushisa, futhi zingakhiwa ngokuya ngezidingo zamakhasimende. I-SICTECH silicon carbide element yokushisa inganikela nangezingubo ezahlukahlukene zomhlaba ngokuya ngezindawo ezahlukahlukene zokukhiqizwa kwesithando ingavimba ngempumelelo amagesi ashintshashintshayo njengomphunga wamanzi, i-nitrogen, i-hydrogen, amagesi ane-alikhali, ama-oxide wensimbi, njll., ukunciphisa ngempumelelo ukuguguleka kwesici sokushisa se-silicon carbide ngama-volatiles wegesi ayingozi.

    Izici Zomzimba

       

    Izici zezinto

    Iyunithi

    Thayipha

    I-GD / U / W.

    I-HGD

    I-LS / LD

    Ubuningi bePension

    3.2

    3.2

    3.1

    Ukuminyana kwenqwaba

    2.5

    2.58

    2.8

    Ukubonakala kwesifiso

    %

    23

    20

    5

    Amandla okugoba

    MPa ngo-25 ℃

    50

    60

    98

    Ukushisa Okucacile

    kj / kg + ℃ ngo-25 ℃ -1300 ℃

    1.0

    1.0

    1.0

    Ukushisa Ukushisa

    W / m + ℃ ngo-1000 ℃

    12-18

    14-19

    16-21

    Ukumelana Okuzisholo

    Ω cm ngo-1000 ℃

    0.08

    0.1

    0.016

    Coefficient of Ukunwetshwa Thermal

    1000 ℃ (X 10-6 / ℃)

    4.5

    4.5

    4.5